Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same

Single-crystal silicon ingot and wafer having homogeneous vacancy defects, and method and apparatus for making same

US Patent 7125608 · Granted Oct 24, 2006

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Side sill for vehicle2024
Method for manufacturing torsion beam2024
Massager controlling apparatus and method thereof2024
Seat frame2024
Method and apparatus for growing silicon single crystal ingot2024
Device and method for controlling thermotherapeutic apparatus having function of2023
Strain derived from traditional fermented food and having excellent enzyme produ2023
Bacillus sp. strain with improved productivity of fermented soybean meal and met2022
Composition for heat-shrinkable tube and heat-shrinkable tube manufactured there2022
Apparatus for growing single crystalline ingot and method for growing same2022
Apparatus for growing single crystalline ingot and method for growing same2022
Method and apparatus for controlling game2021