Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of developing optimized optical proximity correction (OPC) fragmentation script for photolithographic processing

Method of developing optimized optical proximity correction (OPC) fragmentation script for photolithographic processing

US Patent 7080349 · Granted Jul 18, 2006

Estimated economic value: $7,111,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Automated design layout pattern correction based on context-aware patterns2014
Stitch insertion for reducing color density differences in double patterning tec2014
Methods involving pattern matching to identify and resolve potential non-double-2014
Layout pattern correction for integrated circuits2014
Methods for analyzing design rules2013
Methods for decomposing circuit design layouts and for fabricating semiconductor2013
Methods for quantitatively evaluating the quality of double patterning technolog2013
Methods for pattern matching in a double patterning technology-compliant physica2013
Method of lithographic mask correction using localized transmission adjustment2012
System for generating and optimizing mask assist features based on hybrid (model2012
Single/double dipole mask for contact holes2010
Design rules checking augmented with pattern matching2010