Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Technique to grow high quality ZnSe epitaxy layer on Si substrate

Technique to grow high quality ZnSe epitaxy layer on Si substrate

US Patent 7071087 · Granted Jul 4, 2006

Assignee

No assignee recorded.

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Confined source/drain epitaxy regions and method forming same2025
Transistors with stacked semiconductor layers as channels2025
System and method for multiple step directional patterning2025
Method of forming a semiconductor device2025
Data bandwidth management method and device2025
Etch apparatus for compensating shifted overlayers2024
Epitaxy regions with large landing areas for contact plugs2024
Method for fabricating semiconductor device2024
Confined source/drain epitaxy regions and method forming same2024
Method of forming a semiconductor device2023
Epitaxy regions with large landing areas for contact plugs2023
Method for manufacturing semiconductor structure with enlarged volumes of source2023