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Home › Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth

Method for manufacturing a semiconductor integrated circuit device that includes covering the bottom of an isolation trench with spin-on glass and etching back the spin-on glass to a predetermined depth

US Patent 7060589 · Granted Jun 13, 2006

Estimated economic value: $116,000 ⓘ

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