Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Adjusting the germanium concentration of a semiconductor layer for equal thermal expansion for a hetero-junction bipolar transistor device

Adjusting the germanium concentration of a semiconductor layer for equal thermal expansion for a hetero-junction bipolar transistor device

US Patent 7060582 · Granted Jun 13, 2006

Estimated economic value: $638,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device, method of manufacturing semiconductor device, and antenna 2020
Semiconductor device, method of manufacturing semiconductor device, and antenna 2017
Semiconductor device, method of manufacturing semiconductor device, and antenna 2016
High-frequency semiconductor device and method of manufacturing the same2016
Semiconductor device, method of manufacturing semiconductor device, and antenna 2015
Vapor-phase growth method, semiconductor manufacturing method and semiconductor 2009
Vapor-phase growth method, semiconductor manufacturing method and semiconductor 2009
Antibodies specific for phosphorylation sites and screening methods using the sa2008
Vapor-phase growth method, semiconductor manufacturing method and semiconductor 2007
Vapor-phase growth method, semiconductor manufacturing method and semiconductor 2007
Vapor-phase growth method, semiconductor manufacturing method and semiconductor 2007
Vapor-phase growth method, semiconductor manufacturing method and semiconductor 2007