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Home › Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made

US Patent 7049247 · Granted May 23, 2006

Estimated economic value: $5,226,000 ⓘ

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