Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Methods of forming power semiconductor devices having laterally extending base shielding regions

Methods of forming power semiconductor devices having laterally extending base shielding regions

US Patent 7041559 · Granted May 9, 2006

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power devices having tunable saturation current clamps therein that support impr2024
Power MOSFET and JBSFET cell topologies with superior high frequency figure of m2022
Monolithically-integrated AC switch having JBSFETs therein with commonly-connect2020
Power MOSFETs with superior high frequency figure-of-merit2019
Integrated circuit power devices having junction barrier controlled schottky dio2004
Power semiconductor devices having laterally extending base shielding regions th2004
Vertical power devices having retrograded-doped transition regions therein2004
Vertical power devices having retrograded-doped transition regions and insulated2004
Methods of forming vertical mosfets having trench-based gate electrodes within d2004
Radio frequency (RF) power devices having faraday shield layers therein2003
Vertical power devices having trench-based electrodes therein2003
Vertical MOSFETs having trench-based gate electrodes within deeper trench-based 2003