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Home › Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell

Magneto-resistance effect element magneto-resistance effect memory cell, MRAM, and method for performing information write to or read from the magneto-resistance effect memory cell

US Patent 7018725 · Granted Mar 28, 2006

Estimated economic value: $360,000 ⓘ

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