Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDT

Semiconductor device with metal fill by treatment of mobility layers including forming a refractory metal nitride using TMEDT

US Patent 6984874 · Granted Jan 10, 2006

Estimated economic value: $2,550,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Providing access to a computing device2025
Electrode formation2024
Assemblies having conductive structures with three or more different materials2024
Computing device reboot2023
Assemblies having conductive structures with three or more different materials2023
Methods of forming silicon nitride including plasma exposure2023
Computing device reboot2022
Forming a barrier material on an electrode2022
Electrode/dielectric barrier material formation and structures2021
Methods of forming semiconductor devices comprising silicon nitride on high aspe2021
Assemblies having conductive structures with three or more different materials2021
Methods of forming silicon nitride by atomic layer deposition and methods of for2018