Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

Transition metal doped ferromagnetic III-V nitride material films and methods of fabricating the same

US Patent 6955858 · Granted Oct 18, 2005

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Indium gallium nitride (InGaN) relaxed templates employed as a substrate for nit2025
Terahertz plasmonics for testing very large-scale integrated circuits under bias2025
Terahertz plasmonics for testing very large-scale integrated circuits under bias2023
Terahertz plasmonics for testing very large-scale integrated circuits under bias2021
Light emitting diode2011
Optoelectonic devices having arrays of quantum-dot compound semiconductor superl2007
Optoelectronic devices having arrays of quantum-dot compound semiconductor super2005
Methods of forming nano-scale electronic and optoelectronic devices using non-ph2004
Methods of forming indium gallium nitride or aluminum indium gallium nitride usi1998
Stacked quantum well aluminum indium gallium nitride light emitting diodes1997
Gradient lens fabrication1990
Patterned tunnel junction1989