Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

US Patent 6927149 · Granted Aug 9, 2005

Estimated economic value: $343,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Group III-V light emitting diode2023
Device control system2023
ScAlMgO4 monocrystalline substrate, and method of manufacture thereof2023
Illumination device and light-emitting module2023
Air conditioning system2023
RAMO4 substrate and method of manufacture thereof, and group III nitride semicon2022
Wavelength conversion device2022
RAMO4 substrate and manufacturing method thereof2022
Group III nitride semiconductor light emitting diode, and method for producing s2022
Air conditioning system2021
Wavelength converter2021
Group III nitride semiconductor and method for producing same2021