Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical 8F2 cell dram with active area self-aligned to bit line

Vertical 8F2 cell dram with active area self-aligned to bit line

US Patent 6884676 · Granted Apr 26, 2005

Estimated economic value: $68,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Deep trench polysilicon fin first2016
Voltage contrast inspection of deep trench isolation2016
Voltage contrast inspection of deep trench isolation2015
Method of making sensor platform using a non-horizontally oriented nanotube elem2013
Sensor platform using a horizontally oriented nanotube element2012
One-time programmable, non-volatile field effect devices and methods of making s2012
Non-volatile electromechanical field effect devices and circuits using same and 2011
Nanotube-on-gate FET structures and applications2011
Sensor platform using a non-horizontally oriented nanotube element2010
Sensor platform using a horizontally oriented nanotube element2010
Devices having vertically-disposed nanofabric articles and methods of making the2010
Devices having horizontally-disposed nanofabric articles and methods of making t2009