Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of forming a contact structure and a ferroelectric memory device

Method of forming a contact structure and a ferroelectric memory device

US Patent 6878982 · Granted Apr 12, 2005

Estimated economic value: $4,626,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Contact structure for an integrated semiconductor device2006
Capacitor for semiconductor integrated devices2006
Device integrating a nonvolatile memory array and a volatile memory array2006
Method of fabricating a ferroelectric stacked memory cell2005
In-situ deposition and doping process for polycrystalline silicon layers and the2005
Contact structure for semiconductor devices and corresponding manufacturing proc2004
Contact structure for an integrated semiconductor device2004
Manufacturing process for a monolithic semiconductor device comprising at least 2004
Method of fabricating a ferroelectric stacked memory cell2003
Contact structure for a ferroelectric memory device2003
Ferroelectric memory cell and corresponding manufacturing method2003
Process for selectively sealing ferroelectric capacitive elements incorporated i2003