Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3

Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3

US Patent 6864125 · Granted Mar 8, 2005

Estimated economic value: $1,367,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Methods of forming nanostructures utilizing self-assembled nucleic acids2025
Method of forming photonics structures2025
String driver assemblies including two-dimensional materials, and related memory2025
Epitaxial single crystalline silicon growth for a horizontal access device2025
Driver placement in memories having stacked memory arrays2025
Memory circuitry comprising a vertical string of memory cells and a conductive v2024
Methods of forming electronic devices2024
Electronic devices including a seed region and magnetic regions2024
Methods of forming nanostructures using self-assembled nucleic acids, and nanost2024
Methods of forming material within openings extending into a semiconductor const2024
Transistors comprising two-dimensional materials and related memory cells and el2024
Confined cell structures and methods of forming confined cell structures2024