Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-k dielectric materials and processes for manufacturing them

High-k dielectric materials and processes for manufacturing them

US Patent 6861695 · Granted Mar 1, 2005

Estimated economic value: $1,260,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Magnetic tape integration with distributed disk file systems2022
Low stress sacrificial cap layer2015
Formation of a selective carbon-doped epitaxial cap layer on selective epitaxial2014
Nickel silicide formation for semiconductor components2013
Method of forming capacitors2012
Method of forming capacitors2012
Capacitor formed on a recrystallized polysilicon layer2011
Low stress sacrificial cap layer2011
FUSI integration method using SOG as a sacrificial planarization layer2011
FUSI integration method using SOG as a sacrificial planarization layer2010
FUSI integration method using SOG as a sacrificial planarization layer2010
High-K dielectric materials and processes for manufacturing them2010