Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate

Process for forming a low resistivity titanium silicide layer on a silicon semiconductor substrate

US Patent 6812121 · Granted Nov 2, 2004

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Photovoltaic module comprising a plurality of bifacial cells and method for prod2020
Silicide formation on a wafer2016
Reflective device for a photovoltaic module with bifacial cells2015
Passive communication device and passive access control system2007
Method of forming an etch stop layer in a semiconductor device2005
Method of selectively forming silicide2004
Process for forming a low resistivity titanium silicide layer on a silicon semic2001
Process for forming a low resistivity titanium silicide layer on a silicon semic2001
Process for forming a low resistivity titanium silicide layer on a silicon semic2001