Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of making a bipolar transistor having a reduced base transit time

Method of making a bipolar transistor having a reduced base transit time

US Patent 6808999 · Granted Oct 26, 2004

Estimated economic value: $716,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor device and manufacturing method of the same2003
Method of production of semiconductor device2002
Method of fabricating semiconductor device2001
Structure and fabrication of bipolar transistor2001
Method of producing semiconductor device2000
Method of manufacturing semiconductor resistors2000
Semiconductor device and method of manufacturing the semiconductor device2000
Bipolar transistor and its manufacturing method2000
Semiconductor device and its manufacturing method1999
Structure of complementary bipolar transistors1999
Semiconductor device and its manufacturing method1999
Manufacturing method for making bipolar device having double polysilicon structu1999