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Home › Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning

Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning

US Patent 6800940 · Granted Oct 5, 2004

Estimated economic value: $2,484,000 ⓘ

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