Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Extrusion-free wet cleaning process for copper-dual damascene structures

Extrusion-free wet cleaning process for copper-dual damascene structures

US Patent 6794292 · Granted Sep 21, 2004

Estimated economic value: $918,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Fabricating method for a metal oxide semiconductor transistor2009
Method of removing a metal silicide layer on a gate electrode in a semiconductor2009
Method of fabricating strained-silicon transistors and strained-silicon CMOS tra2009
Method of fabricating semiconductor devices and method of removing a spacer2008
Method of cleaning wafer and method of manufacturing gate structure2007
Metal oxide semiconductor transistor2007
Method of removing spacers and fabricating MOS transistor2007
Extrusion-free wet cleaning process for copper-dual damascene structures2007
Damascene process capable of avoiding via resist poisoning2006
Via-first dual damascene process2004
Etching process for forming damascene structure of the semiconductor2004
Method of cleaning a dual damascene structure2004