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Home › METHOD FOR FORMING A SEMICONDUCTOR DEVICE INCLUDING FORMING VERTICAL NPN AND PNP TRANSISTORS BY EXPOSING THE EPITAXIAL LAYER, FORMING A MONOCRYSTAL LAYER AND ADJUSTING THE IMPURITY CONCENTRATION IN THE EPITAXIAL LAYER

METHOD FOR FORMING A SEMICONDUCTOR DEVICE INCLUDING FORMING VERTICAL NPN AND PNP TRANSISTORS BY EXPOSING THE EPITAXIAL LAYER, FORMING A MONOCRYSTAL LAYER AND ADJUSTING THE IMPURITY CONCENTRATION IN THE EPITAXIAL LAYER

US Patent 6780725 · Granted Aug 24, 2004

Estimated economic value: $1,000 ⓘ

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