Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications

Post-etch photoresist strip with O2 and NH3 for organosilicate glass low-K dielectric etch applications

US Patent 6777344 · Granted Aug 17, 2004

Estimated economic value: $7,989,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method to minimize MTJ sidewall damage and bottom electrode redeposition using I2017
Methods for forming microlenses2014
Etching processes used in MEMS production2012
Method for providing uniform removal of organic material2009
Methods and apparatus for monitoring a process in a plasma processing system by 2008
Nitrous oxide stripping process for organosilicate glass2007
Selective oxygen-free etching process for barrier materials2006
Use of ammonia for etching organic low-k dielectrics2006
Method of preventing damage to porous low-k materials during resist stripping2006
Etch back process using nitrous oxide2005
Use of ammonia for etching organic low-k dielectrics2005
Method of improving adhesion of cap oxide to nanoporous silica for integrated ci2005