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Home › Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes

Method for combined fabrication of indium gallium arsenide/indium phosphide avalanche photodiodes and P-I-N photodiodes

US Patent 6743657 · Granted Jun 1, 2004

Estimated economic value: $3,751,000 ⓘ

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