Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Electrode for p-type gallium nitride-based semiconductors

Electrode for p-type gallium nitride-based semiconductors

US Patent 6734091 · Granted May 11, 2004

Estimated economic value: $4,965,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Image rendering in organic light emitting diode (OLED) displays, apparatuses, sy2023
Direct conversion of teflon tape into diamond, Q-carbon, and graphene films2023
Diamond nanofibers and methods of making diamond nanofibers and large-size diamo2022
High-temperature carbon-based superconductor: B-doped Q-carbon2021
Doping and fabrication of diamond and C-BN based device structures2021
Systems and methods of fabrication and use of wear-resistant materials2021
Mechanical seal between an actuator housing and cover and method for providing a2020
Semiconductor light-emitting device and method for fabricating the same2020
Synthesis and processing of novel phase of carbon (Q-carbon)2020
Synthesis and processing of Q-carbon, graphene, and diamond2020
Synthesis and processing of novel phase of boron nitride (Q-BN)2020
Synthesis and processing of pure and NV nanodiamonds and other nanostructures fo2019