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Home › Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer

Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer

US Patent 6723622 · Granted Apr 20, 2004

Estimated economic value: $26,995,000 ⓘ

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