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Home › Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure

Method of forming self-aligned, trenchless mangetoresitive random-access memory (MRAM) structure with sidewall containment of MRAM structure

US Patent 6689624 · Granted Feb 10, 2004

Estimated economic value: $2,630,000 ⓘ

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