Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer

Method of reducing boron outgassing at trench power IC's oxidation process for sacrificial oxide layer

US Patent 6680261 · Granted Jan 20, 2004

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Color-mixing light-emitting diode module2016
Power semiconductor and manufacturing method thereof2015
Cover with handle structure for facilitating hold a device and method of using t2014
Decoding method utilizing temporally ambiguous code and apparatus using the same2010
Method for fabricating trench metal-oxide-semiconductor field effect transistor2009
Hard mask structure for deep trenched super-junction device2008
Method for manufacturing trench MOSFET2007
DMOS device having a trenched bus structure2007
Manufacturing process and structure of integrated circuit2007
Termination structure of DMOS device2006
DMOS device having a trenched bus structure2006
Termination structure for trench DMOS device and method of making the same2006