Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device including low dielectric constant insulating film formed on upper and side surfaces of the gate electrode

Semiconductor device including low dielectric constant insulating film formed on upper and side surfaces of the gate electrode

US Patent 6670711 · Granted Dec 30, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Solid state image sensor and manufacturing method thereof2020
Semiconductor device2019
Semiconductor device and manufacturing method thereof2018
Semiconductor device, method of manufacturing same, and method of controlling se2018
Semiconductor device and manufacturing method thereof2017
Semiconductor device, method of manufacturing same, and method of controlling se2017
Manufacturing method of semiconductor device2015
Semiconductor device with isolation insulating layer containing air gap2015
Manufacturing method of semiconductor device2015
Semiconductor device with isolation insulating layer containing air gap2014
High-frequency semiconductor device and method of manufacturing the same2008
Capacitance measurement circuit2007