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Home › Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region

Method of forming a fully-depleted SOI ( silicon-on-insulator) MOSFET having a thinned channel region

US Patent 6660598 · Granted Dec 9, 2003

Estimated economic value: $6,520,000 ⓘ

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