Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Single mask trench fred with enlarged Schottky area

Single mask trench fred with enlarged Schottky area

US Patent 6656843 · Granted Dec 2, 2003

Estimated economic value: $11,746,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for fabricating a shallow and narrow trench FET and related structures2017
Method for fabricating a vertical LDMOS device2014
Process for manufacture of thin wafer2013
Vertical LDMOS device and method for fabricating same2012
Double sided semiconduction device with edge contact and package therefor2011
Dynamic deep depletion field effect transistor2008
High density FET with self-aligned source atop the trench2008
Method for fabrication of MOSFET with buried gate2005
Manufacturing process for fast recovery diode2004
MOSFET with a buried gate2003
Low voltage planar power MOSFET with serpentine gate pattern2003
Single mask process for manufacture of fast recovery diode2001