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Home › METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS

US Patent 6656781 · Granted Dec 2, 2003

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