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Home › Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure

Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure

US Patent 6653154 · Granted Nov 25, 2003

Estimated economic value: $2,006,000 ⓘ

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