Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Structure of and manufacturing method for semiconductor device employing ferroelectric substance

Structure of and manufacturing method for semiconductor device employing ferroelectric substance

US Patent 6623985 · Granted Sep 23, 2003

Estimated economic value: $1,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Capacitive sensor and manufacturing method therefor2012
Method for fabrication MEMS-resonator2010
Semiconductor device and manufacturing method thereof2007
Method and circuit for reading data from a ferroelectric memory cell2006
Ferroelectric capacitor with dielectric lining, semiconductor memory device empl2005
Semiconductor device and manufacturing method thereof2005
Method and circuit for reading data from a ferroelectric memory cell2004
Semiconductor device and method of fabricating the same2004
Semiconductor memory device2004
Ferroelectric capacitor with dielectric lining, semiconductor memory device empl2003
Metal oxide capacitor with hydrogen diffusion blocking covering2003
Read-out circuit2002