Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture

Trench-gate field-effect transistors with low gate-drain capacitance and their manufacture

US Patent 6566708 · Granted May 20, 2003

Estimated economic value: $1,221,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Trench MOSFET2025
Combined MCD and MOS transistor semiconductor device2022
Trench gate semiconductor device and method of manufacture2022
Semiconductor device and a method of making a semiconductor device2018
TrenchMOS2018
PowerMOS2018
Circuitry with voltage limiting and capactive enhancement2018
Trench-gate RESURF semiconductor device and manufacturing method2017
Semiconductor device having a plurality of source lines being laid in both X and2017
Semiconductor device having isolation trenches2015
Trench-gate RESURF semiconductor device and manufacturing method2015
Trench-gate semiconductor device2014