Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor memory device having a trench and a gate electrode vertically formed on a wall of the trench

Semiconductor memory device having a trench and a gate electrode vertically formed on a wall of the trench

US Patent 6563177 · Granted May 13, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for measuring location of moving object based on artificial in2025
Semiconductor memory device having a trench and a gate electrode vertically form2004
Method for fabricating a semiconductor device2001
Semiconductor device containing semiconductor region formed in active layer on s1998