Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout

Integrated scheme for predicting yield of semiconductor (MOS) devices from designed layout

US Patent 6562638 · Granted May 13, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High density vertical thyristor memory cell array with improved isolation2022
Thyristor volatile random access memory and methods of manufacture2021
Thyristor volatile random access memory and methods of manufacture2020
High density vertical thyristor memory cell array with improved isolation2020
Thyristor volatile random access memory and methods of manufacture2020
Methods of reading and writing data in a thyristor random access memory2019
Method of writing into and refreshing a thyristor volatile random access memory2019
Method and system for dimensional uniformity using charged particle beam lithogr2019
Methods of reading and writing data in a thyristor random access memory2019
Thyristor volatile random access memory and methods of manufacture2019
Write assist thyristor-based SRAM circuits and methods of operation2019
Vertical thyristor memory with minority carrier lifetime reduction2019