{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method of making a semiconductor device with a low permittivity region", "item": "https://www.patentleaderboard.com/patent/6531376"}]}
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Home › Method of making a semiconductor device with a low permittivity region

Method of making a semiconductor device with a low permittivity region

US Patent 6531376 · Granted Mar 11, 2003

Estimated economic value: $5,770,000 ⓘ

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