Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor

Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor

US Patent 6521961 · Granted Feb 18, 2003

Estimated economic value: $33,792,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Control method for switches based on dual phase materials2025
Multi-level 3D stacked package and methods of forming the same2025
Semiconductor device including a superlattice and enriched silicon 28 epitaxial 2025
RF devices with enhanced performance and methods of forming the same2025
Method for making semiconductor device including a superlattice and enriched sil2025
Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including2025
Method for making semiconductor device with selective etching of superlattice to2025
System and method for transistor pathogen detector2025
Monolithically integrated waveguide sensors on diamond display glass system and 2025
Semiconductor device including superlattice with O18 enriched monolayers2025
Method for making a semiconductor superlattices with different non-semiconductor2025
RF devices with enhanced performance and methods of forming the same2024