Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stacked semiconductor integrated circuit device having an inter-electrode barrier to silicide formation

Stacked semiconductor integrated circuit device having an inter-electrode barrier to silicide formation

US Patent 6512278 · Granted Jan 28, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

FLOW CONVERSION SYSTEM FOR A MANUFACTURING PROCESS, METHOD FOR CONVERTING A PROC2005
Semiconductor device and method of making thereof2003
Stacked semiconductor integrated circuit device and manufacturing method thereof2002
Semiconductor device including a wiring layer having a non-doped or high resisti2001
Method of forming a semiconductor device comprising a dummy polysilicon gate ele2000