Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of manufacturing a dual damascene structure using boron nitride as trench etching stop film

Method of manufacturing a dual damascene structure using boron nitride as trench etching stop film

US Patent 6511908 · Granted Jan 28, 2003

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Semiconductor wafer, semiconductor device diced from semiconductor wafer, and me2018
Nitride semiconductor device2017
Vacuum freeze-drying apparatus and frozen particle manufacturing method2017
Nitride semiconductor structure, nitride semiconductor light emitting element, n2015
Transfer needle2007
Semiconductor device2003
Method of fabricating semiconductor device2002
Gaskets2001
Process for manufacturing a semiconductor device2000
Process for fabricating nonvolatile semiconductor memory device having a ferroel1998
Image pick-up device having switching over means, image pick-up means, monitor m1998
Electronic camera with detachable buffer memory1998