Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication

Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication

US Patent 6507044 · Granted Jan 14, 2003

Estimated economic value: $2,234,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrical cable equipped with a device for indicating the presence of an electr2025
Infrared sensor and method of calibrating the same2010
Thermally conductive integrated circuit mounting structures2007
Dynamically adjustable probe tips2006
Thermally conductive integrated circuit mounting structures2006
Signal processor executing variable size instructions using parallel memory bank2005
Photon detection enhancement of superconducting hot-electron photodetectors2004
Integrated circuit cooling device2004
Nanotube tip for atomic force microscope2004
Highly selective, highly uniform plasma etch process for spin-on glass1996