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Home › Method of etching a polysilicon layer during the stripping of the photoresist shape used as an etch mask to create an opening to an underlying fuse structure

Method of etching a polysilicon layer during the stripping of the photoresist shape used as an etch mask to create an opening to an underlying fuse structure

US Patent 6489227 · Granted Dec 3, 2002

Estimated economic value: $5,989,000 ⓘ

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