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Home › METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, HAVING FIRST AND SECOND SEMICONDUCTOR REGIONS WITH FIELD SHIELD ISOLATION STRUCTURES AND A FIELD OXIDE FILM COVERING A JUNCTION BETWEEN SEMICONDUCTOR REGIONS

US Patent 6482692 · Granted Nov 19, 2002

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