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Home › Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained

Process for obtaining a layer of single-crystal germanium or silicon on a substrate of single-crystal silicon or germanium, respectively, and multilayer products obtained

US Patent 6429098 · Granted Aug 6, 2002

Estimated economic value: $312,000 ⓘ

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