Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Semi-insulating silicon carbide without vanadium domination

Semi-insulating silicon carbide without vanadium domination

US Patent 6403982 · Granted Jun 11, 2002

Estimated economic value: $17,414,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Large diameter silicon carbide wafers2025
Large dimension silicon carbide single crystalline materials with reduced crysta2024
Large diameter silicon carbide wafers2024
Reduced optical absorption for silicon carbide crystalline materials2024
Dislocation distribution for silicon carbide crystalline materials2022
Method of producing high quality silicon carbide crystal in a seeded growth syst2017
Testing software on a computer system2017
Producing high quality bulk silicon carbide single crystal by managing thermal s2015
Micropipe-free silicon carbide and related method of manufacture2015
Method for producing semi-insulating resistivity in high purity silicon carbide 2015
One hundred millimeter SiC crystal grown on off-axis seed2015
Low micropipe 100 mm silicon carbide wafer2014