Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Trench insulated-gate bipolar transistor with improved safe-operating-area

Trench insulated-gate bipolar transistor with improved safe-operating-area

US Patent 6392273 · Granted May 21, 2002

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Power semiconductor package with conductive clip2015
IGBT power semiconductor package having a conductive clip2013
U-shape metal-oxide-semiconductor (UMOS) gate structure for high power MOS-based2009
Thyristor switch with turn-off current shunt, and operating method2007
High voltage FET switch with conductivity modulation2006
Thyristor switch with turn-off current shunt, and operating method2005
High voltage switch2005
High voltage insulated-gate bipolar switch2002
High power unipolar FET switch2002
High power rectifier2001
High power trench-based rectifier with improved reverse breakdown characteristic2001
Protective metal silicate coating for electrodeless HID lamps1999