Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of etching trenches for metallization of integrated circuit devices with a narrower width than the design mask profile

Method of etching trenches for metallization of integrated circuit devices with a narrower width than the design mask profile

US Patent 6387798 · Granted May 14, 2002

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Optically-based method and apparatus for detecting and characterizing surface pi2006
Method of using silicon rich carbide as a barrier material for fluorinated mater2004
Inductor-capacitor resonant RF switch2002
Method of using silicon rich carbide as a barrier material for fluorinated mater2002
Use of boron carbide as an etch-stop and barrier layer for copper dual damascene2002
Use of boron carbide as an etch-stop and barrier layer for copper dual damascene2002
Tri-layer resist method for dual damascene process2001