Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method of reducing junction capacitance of source/drain region

Method of reducing junction capacitance of source/drain region

US Patent 6383883 · Granted May 7, 2002

Estimated economic value: $2,390,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrostatic discharge protection device including source silicide pattern and 2025
Electrostatic discharge protection structure2025
Electrostatic discharge protection semiconductor device2021
Electrostatic discharge protection structure2021
Electrostatic discharge protection semiconductor device2020
Electrostatic discharge protection semiconductor device2020
Grounded gate NMOS transistor having source pulled back region2019
Electrostatic discharge protection semiconductor device2019
Electrostatic discharge protection semiconductor device2018
Electrostatic discharge protection semiconductor device and layout structure of 2018
Electrostatic discharge protection device and manufacturing method thereof2018
Semiconductor device2018