Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › MOSFETs with improved short channel effects and method of making the same

MOSFETs with improved short channel effects and method of making the same

US Patent 6380015 · Granted Apr 30, 2002

Estimated economic value: $177,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Integrated circuit arrangement and method for the manufacture thereof2005
Semiconductor structure for a MOS transistor2001
Method for manufacturing an integrated circuit arrangement2000
Process for producing an integrated circuit device with at least one MOS transis2000
Method of producing an MOS transistor1999
Circuit structure having at least one MOS transistor and method for its producti1999
MOSFETs with improved short channel effects1999
Method for producing a CMOS circuit1999
Process for the production of an integrated CMOS circuit1999
Process for manufacturing an integrated CMOS circuit1999
Low junction leakage mosfets with particular sidewall spacer structure1999
Semiconductor structure for an MOS transistor and method for fabricating the sem1998