Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vacancy dominated, defect-free silicon

Vacancy dominated, defect-free silicon

US Patent 6379642 · Granted Apr 30, 2002

Estimated economic value: $10,360,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Growth of a uniformly doped silicon ingot by doping only the initial charge2020
Apparatus and method for doping a semiconductor melt comprising a seed chuck, a 2019
Silicon ingot having uniform multiple dopants and method and apparatus for produ2019
Silicon single crystal doped with gallium, indium, or aluminum2015
Controlling a melt-solid interface shape of a growing silicon crystal using an u2013
Method and device for continuously measuring silicon island elevation2009
Process for forming low defect density, ideal oxygen precipitating silicon2008
Process for forming low defect density, ideal oxygen precipitating silicon2008
Process for forming low defect density, ideal oxygen precipitating silicon2008
Process for forming low defect density, ideal oxygen precipitating silicon2008
Process for forming low defect density, ideal oxygen precipitating silicon2008
Process for preparing single crystal silicon having improved gate oxide integrit2008