Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Edge termination of semiconductor devices for high voltages with resistive voltage divider

Edge termination of semiconductor devices for high voltages with resistive voltage divider

US Patent 6365930 · Granted Apr 2, 2002

Estimated economic value: $15,846,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Charge balance semiconductor device, in particular for high efficiency RF applic2024
Super-junction power MOSFET device with improved ruggedness, and method of manuf2022
Charge balance semiconductor device, in particular for high efficiency RF applic2021
Super junction semiconductor device for RF applications, linear region operation2018
Vertical conduction integrated electronic device protected against the latch-up 2018
Vertical conduction integrated electronic device protected against the latch-up 2017
Integrated vertical trench MOS transistor2017
Vertical MOS semiconductor device for high-frequency applications, and related m2016
Integrated electronic device and method for manufacturing thereof2016
Semiconductor device with improved linear and switching operating modes2015
RF identification device with near-field-coupled antenna2015
RF identification device with near-field-coupled antenna2015